UTC Ltd. distribution partner of TRS-STAR GmbH is introducing a new Mosfet/IGBT package solution for high power designs called TO-LL (TO-Leadless, HSOF-8). The housing is ideally suited for high density, high current application.

With its small size and low height (9.9 x 11.7 x 2.3 mm) and a drain-source creeping distance of 2.7 mm the package is ideally suited for replacing power-limited D2PAK/D2PAK-7 solutions or reducing component count in discrete designs for improved overall reliability. Further advantage is given by the ability for designing very compact high current circuitry which leads to less parasitic effects and EMI problems especially at application working at higher frequencies.

For optimized gate drive the package has a separate signal-source pin for reducing inductive effects at medium or higher switching frequencies ensuring safe switching and good switching performance.

The UTC TOLL-8B-Family is initiated with two high voltage Mosfet with 600V/130mOhm and 400V/180mOhm. Both transistors are fast switching types, have a low FOM (Figure of Merit) and high rugged avalanche characteristics.

Due to UTC´s broad portfolio of low and high voltage Mosfet chips and their high flexibility as a design and manufacturing company more part family members in different performance classes will be follow soon. Especially Trench Mosfet in the voltage range up to 80V with high current capability and low RDS(ON) will be released soon and can be a 1:1 drop-in replacement for existing solutions from established manufacturers. Depending on the customer demands UTC is also open for customized solutions.